MBQ40T120FES Datasheet, PDF (1/8 Pages) MagnaChip Semiconductor. – High speed FieldStop Trench IGBT

MBQ40T120FES
High speed FieldStop Trench IGBT
General Description
This IGBT is produced using advanced MagnaChip’s Field
Stop Trench IGBT Technology, which provides low VCE(SAT),
high switching performance and excellent quality.
This device is for PFC, UPS & Inverter applications.
Applications
 PFC
 UPS
 Inverter
Features
 High Speed Switching & Low Power Loss
 VCE(sat) = 2.0V @ IC = 40A
 High Input Impedance
 trr = 100ns (typ.)
 Ultra Soft, fast recovery anti-parallel diode
 Ultra narrowed VF distribution control
 Positive Temperature coefficient for easy paralleling
TO-247
G
C
E
Absolute Maximum Ratings
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Pulsed collector current, pulse time limited by Tjmax
Diode forward current @ TC = 100°C
Diode pulsed current, Pulse time limited by Tjmax
Power dissipation
Short circuit withstand time
VCE = 600V, VGE = 15V, TC = 150°C
Allowed number of short circuit < 1000
Time between short circuits ≥ 1.0s
Operating Junction and storage temperature range
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Thermal Characteristics
Characteristics
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Jun. 2015 Revision 0.0
1
Symbol
VCES
VGES
IC
ICM
IF
IFM
PD
tsc
TJ, Tstg
Rating
1200
±20
80
40
160
40
160
357
142
10
-55~150
Unit
V
V
A
A
A
A
A
W
W
μs
°C
Symbol
RθJA
RθJC
RθJC
Rating
40
0.35
0.8
Unit
°C/W
MagnaChip Semiconductor Ltd.