MBQ25T120FESC Datasheet, PDF (1/10 Pages) MagnaChip Semiconductor. – High speed Fieldstop Trench IGBT

MBQ25T120FESC
High speed Fieldstop Trench IGBT
General Description
This IGBT is produced using advanced MagnaChip’s Field
Stop Trench IGBT Technology, which provides low VCE(SAT),
high switching performance and excellent quality.
This device is for PFC, UPS & PV inverter and Welder
Applications.
Applications
 PFC
 UPS
 Welder
 PV Inverter
Features
 High Speed Switching & Low VCE(sat) Loss
 VCE(sat) = 2.0V @IC = 25A
 High Input Impedance
 trr = 100ns (typ.) @ diF/dt = 500A/ μs
 Maximum junction temperature 175°C
 Pb-free ; RoHS compliant
 Ultra Soft, fast recovery anti-parallel diode
 Ultra Narrowed VF distribution control
 Positive Temperature coefficient for easy paralleling
TO-247
G
C
E
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
TC=25°C
TC=100°C
Pulsed collector current, tp limited by Tjvjmax
Turn off safe operating area VCE ≤ 1200V, Tvj ≤ 175°C
Diode forward current limited by Tvjmax
TC=25°C
TC=100°C
Diode pulsed current, tp limited by Tvjmax
Gate-emitter voltage
Power dissipation
Short circuit withstand time
VCC ≤ 600V, VGE = 15V, Tvj = 175°C
Allowed number of short circuits < 1000
Time between short circuits ≥ 1.0s
TC=25°C
TC=100°C
Operating Junction temperature range
Storage temperature range
Soldering temperature
Wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Thermal Characteristic
Parameter
Thermal resistance junction-to-ambient
Thermal resistance junction-to-case for IGBT
Thermal resistance junction-to-case for Diode
Sep. 2015 Revision 1.0
1
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
PD
tsc
Tvj
Tstg
M
Symbol
RθJA
RθJC
RθJC
Rating
1200
50
25
100
100
25
12.5
100
±20
348
174
10
-40~175
-55~150
260
0.6
Unit
V
A
A
A
A
A
A
V
W
W
μs
°C
°C
°C
Nm
Rating
40
0.43
1.55
Unit
°C/W
MagnaChip Semiconductor Ltd.