TH71111 Datasheet, PDF (9/22 Pages) Melexis Microelectronic Systems – 868/915MHz FSK/FM/ASK Receiver

TH71111
868/915MHz
FSK/FM/ASK Receiver
3 Technical Data
3.1 Absolute Maximum Ratings
Parameter
Symbol
Condition / Note
Supply voltage
Input voltage
Input RF level
Storage temperature
Junction temperature
Thermal Resistance
Power dissipation
Electrostatic discharge
V_CC
V_IN
P_iRF
T_STG
T_J
R_thJA
P_diss
V_ESD1
V_ESD2
@ LNA input
human body model, 3)
human body model, 4)
3) all pins except OUT_LNA, IF1P and IF1N
4) pin OUT_LNA, IF1P and IF1N
3.2 Normal Operating Conditions
Parameter
Supply voltage
Operating temperature
Input low voltage (CMOS)
Input high voltage (CMOS)
Input frequency range
IF range
XOSC frequency
VCO frequency
Frequency deviation
FSK data rate
ASK data rate
FM bandwidth
5) B_IF = 400 kHz, P_IN = -90 dBm
Symbol
Condition
V_{CC, FSK}
V_{CC, ASK}
T_A
V_IL
V_IH
f_i
f_IF
f_ref
f_LO
Δf
R_FSK
R_ASK
f_m
0 °C to 85 °C
-20 °C to 85 °C
-40 °C to 85 °C
-40 °C to 85 °C
ENRX pin
ENRX pin
set by the crystal
f_LO = 16 • f_ref
at FSK or FM
NRZ, C15 = NIP, 5)
NRZ, C16 = NIP, 5)
3.3 Crystal Parameters
Parameter
Crystal frequency
Load capacitance
Static capacitance
Series resistance
Symbol
Condition
f₀
fundamental mode, AT
C_L
C₀
R₁
Min
0
- 0.3
-40
-1.0
-0.75
Max
7.0
V_cc+0.3
10
+125
+150
60
0.1
+1.0
+0.75
Min
2.5
2.6
2.7
2.3
-40
0.7*V_CC
789.3
0.4
25
800
±2.5
Max
5.5
5.5
5.5
5.5
+85
0.3*V_CC
940.7
22
29.063
930
±80
180
260
15
Min
Max
25
29.063
10
15
7
50
Unit
V
V
dBm
°C
°C
K/W
W
kV
Unit
V
ºC
V
V
MHz
MHz
MHz
MHz
kHz
kbps
kbps
kHz
Unit
MHz
pF
pF
Ω
39010 71111
Rev. 013
Page 9 of 22
Data Sheet
June/07