SM6T6V8A Datasheet, PDF (2/3 Pages) STMicroelectronics – TRANSILTM

MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: [phone] • Fax: [phone]
1-800-831-4881 Email: [e-mail] Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES SM6T SERIES
Fig. 1 - Peak Pulse Power Rating Curve
100
10
1
0.1
0.1µs
0.2x0.2"(5.0x5.0mm)
Copper Pad Areas
1.0µs
10µs
100µs
t_d - Pulse Width (sec.)
1.0ms
10ms
Fig.3 - Pulse Waveform
150
t_r = 10µsec.
Peak Value
I_PPM
100
T_J = 25°C
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of I_PPM
Half Value- I_PPM
2
50
10/1000µsec.Waveform
t - Time_as(m_des_fi)_{ned by R.E.A.}
t_d
0
0
1.0
2.0 3.0
3.0 ^4.0
4.0
Fig.2 - Pulse Derating
100
87.5
75
62.5
50
37.5
25
12.5
0
0
0.2
0.4
0.6
0.8
1
1.2
T_A - Ambient Temperature
10000
6000
1000
Fig.4 - Typical Junction
C it
Measured at
Zero Bias
V_R,Measured at
100
Stand-Off
Voltage, V_WM
Uni-Directional
Bi-Directional
T_J = 25°C
f = 1.0MH_Z
Vsig = 50mVp-
10
1.0
1
100 200
1000^VWM ^{- Reverse Stand-Off Voltage (V)}
Fig. 5 - Typ.Transient Thermal Impedance
100
10
Fig.6 - Maximum Non-Repetitive Peak
Forward Surge Current
200
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
100
1.0¹
0.1
0.001
0.01
0.1
1
10
100
1000
t_p-Pulse Duration (sec)
10
1
10
100
Number of Cycles at 60 Hz