P4KE68A_13 Datasheet, PDF (2/3 Pages) MDE Semiconductor, Inc. – GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: [phone] • Fax: [phone]
1-800-831-4881 Email: [e-mail] Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES P4KE SERIES
Fig. 1 - Peak Pulse Power Rating
100
Non-repetitive Pulse
Waveform shown in Fig.
3
Fig.2 - Pulse Derating Curve
10
1
0.1
0.1μs
150
100
1.0μs
10μs
100μs
1.0ms
10ms
t_d - Pulse Width (sec.)
Fig.3 - Pulse Waveform
t_r = 10μsec.
Peak Value
I_PPM
Half Value- I_PPM
2
T_J = 25°C
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of I_PPM
50
10/1000μsec.Waveform
as defined by R.E.A.
t_d
0
0
1.0
2.0 _3.0
3.0 ^4.0
4.0
t - Time(ms)
Fig.5 - steady State Power Derating Curve
1.00
L=0.375" (9.5mm)
0.88 Lead Lengths
60 HZ Resistive or
Inductive Load
0.75
0.63
0.50
0.38
1.6x1.6x.040"
0.25
(40x40x1mm)
Copper Heat Sinks
0.13
0.000
0
T_L - Lead Temperature (°C)
Fig.7 - Typical Reverse Leakage Characteristics
100
10
Measured at Devices
Stand-off Voltage,V_WM
T_A = 25°C
1
0.1
0.01
0
V_(BR) - Breakdown Voltage
0
0
0.2
0.4
0.6
0.8
1
1.2
T_A - Ambient Temperature (°C)
Fig.4 - Typ.Junction Capacitance Uni-Directional
10000
T_J = 25°C
f = 1.0MH_Z
Vsig = 50mVp-p
1000
Measured at Zero Bias
100
1000
10
1.0
200
100
Measured at
Stand-Off
Voltage, V_WM
10
V_WM - Reverse Stand-Off Voltage (V)
100
200
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
T_J = T_J max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
50
10
1
5
10
50
100
Number of Cycles at 60 Hz
Fig. 8 - Typ.Transient Thermal Impedance
100
10
1
0.001
0.01
0.1
1
10
t_p-Pulse Duration (sec)
100
1000
11/13/2013