 English |
|
|
|
|
|
|
|
| SMD30KPA17A_13 Datasheet, PDF (1/1 Pages) MDE Semiconductor, Inc. – SILICON-AVALANCHE HIGH SURGE DIODES | |||
| |||
|
MDE Semiconductor, Inc.
SMD30KPA CELL DATA SHEET Preliminary
ï¼SILICON-AVALANCHE HIGH SURGE DIODESï¼
FEATURES
ï¼Glass passivated chip junction
ï¼Bipolar electrical characteristics
ï¼30000W peak pulse power capability on 10/1000us waveform
ï¼Excellent clamping capability
ï¼Repetition rateï¼duty cycleï¼ï¼0.05﹪
ï¼Low incremental surge resistance
. Fast response time: typically less than 1.0ps
from 0 Volts to BV
MECHANICAL DATA
Terminalï¼Silver plated lead ,solderable per
MIL-STD-750,Method 2026
Mounting Positionï¼ Any for CA Series
Weightï¼2.2±0.1g
SMD30KPA
UNI-POLAR
PART NUMBER
BI-POLAR
REVERSE STAND-
OFF VOLTAGE
VRWM(V)
BREAKDOWN
VOLTAGE VBR(V)
MIN. @IT
TEST
CURRE
NT IT
(mA)
PEAK
PULSE
CURRENT
Ipp (A)
REVERSE MAXIMUN
LEAKAGE CLAMPING
@ VRWM VOLTAGE
IR(μA) @IPP VC (V)
SMD30KPA17A SMD30KPA17CA
17
SMD30KPA60A SMD30KPA60CA
60
SMD30KPA280A
280
18.99
67.0
312.8
50
1023.9
5000
5
297.1
5
5
65.3
2
29.3
102.0
464.0
For bidirectional type having Vrwm of 30 volts and less, the IR limit is double.
1
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese