MX25L12836E Datasheet, PDF (63/69 Pages) Macronix International – 128M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY

MX25L12836E
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Write Status Register Cycle Time
Sector Erase Time (4KB)
Block Erase Time (64KB)
Block Erase Time (32KB)
Chip Erase Time
Byte Program Time (via page program command)
Page Program Time
Erase/Program Cycle
Typ. (1)
40
60
0.7
0.5
80
9
1.4
100,000
Max. (2)
100
300
2
2
200
300
5
Unit
ms
ms
s
s
s
us
ms
cycles
Notes:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checker board pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-
mand.
DATA RETENTION
Parameter
Data retention
Condition
55˚C
Min.
20
Max.
Unit
years
LATCH-UP CHARACTERISTICS
Input Voltage with respect to GND on all power pins, SI, CS#
Input Voltage with respect to GND on SO
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
Min.
-1.0V
-1.0V
-100mA
Max.
2 VCCmax
VCC + 1.0V
+100mA
P/N: PM1514
REV. 1.7, AUG. 01, 2012
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