MX25L3206EMI-12G Datasheet, PDF (49/59 Pages) Macronix International – DATASHEET

MX25L3206E
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Write Status Register Time
Sector Erase Time
Block Erase Time
Chip Erase Time
Byte Program Time (via page program command)
Page Program Time
Erase/Program Cycle
Min.
Typ. (1)
5
40
0.4
12.5
9
0.6
100,000
Max. (2)
40
200
2
40
50
3
Unit
ms
ms
s
s
us
ms
cycles
Notes:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checkerboard pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-
mand.
4. Erase/Program cycles comply with JEDEC: JESD-47 & JESD22-A117 standard.
DATA RETENTION
Parameter
Data retention
Condition
55˚C
Min.
20
Max.
Unit
years
LATCH-UP CHARACTERISTICS
Min.
Input Voltage with respect to GND on all power pins, SI, CS#
-1.0V
Input Voltage with respect to GND on SO
-1.0V
Current
-100mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
Max.
2 VCCmax
VCC + 1.0V
+100mA
P/N: PM1568
REV. 1.5, DEC. 04, 2013
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