MX29F400T Datasheet, PDF (39/44 Pages) Macronix International – 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY

MX29F400T/B
ERASE AND PROGRAMMING PERFORMANCE(1)
PARAMETER
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
Erase/Program Cycles
MIN.
100,000
LIMITS
TYP.(2)
1.3
4
7
12
4
Note: 1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C,5V.
3.Maximum values measured at 25°C,4.5V.
MAX.(3)
10.4
32
210
360
12
UNITS
sec
sec
us
us
sec
Cycles
LATCHUP CHARACTERISTICS
Input Voltage with respect to GND on all pins except I/O pins
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except Vcc. Test conditions: Vcc = 5.0V, one pin at a time.
MIN.
-1.0V
-1.0V
-100mA
MAX.
13.5V
Vcc + 1.0V
+100mA
DATA RETENTION
PARAMETER
Data Retention Time
MIN.
20
UNIT
Years
P/N:PM0439
REV. 1.6, NOV. 12, 2001
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