MX30UF4G28AB-XKI Datasheet, PDF (28/85 Pages) Macronix International – 1.8V, 2G/4G-bit NAND Flash Memory

MX30UF2G26(28)AB
MX30UF4G26(28)AB
6-5. Page Program
The memory is programmed by page, which is 2,160 bytes, or 1080 words. After Program load command
(80h) is issued and the row and column address is given, the data will be loaded into the chip sequentially.
Random Data Input command (85h) allows multi-data load in non-sequential address. After data load is
complete, program confirm command (10h) is issued to start the page program operation. The page program
operation in a block should start from the low address to high address. Partial program in a page is allowed
up to 4 times. However, the random data input mode for programming a page is allowed and number of times
is not limited.
The status of the program completion can be detected by R/B# pin or Status register bit SR[6].
The program result is shown in the chip status bit (SR[0]). SR[0] = 1 indicates the Page Program is not
successful and SR[0] = 0 means the program operation is successful.
During the Page Program progressing, only the read status register command and reset command are
accepted, others are ignored.
Figure 12. AC Waveforms for Program Operation after Command 80H
CLE
CE#
tCLS
tCLH
tCS
WE#
tWC
tALS
tALH
ALE
tALH
tWB
RE#
tDS tDH
tDS/tDH
IO[x:0]
80h
-
Din
Din
0
n
1st Address 2nd Address 3rd Address 4th Address 5th Address
Cycle
Cycle
Cycle
Cycle
Cycle
R/B#
10h
70h
Status
Output
tPROG
P/N: PM2031
REV. 1.0, MAY 29, 2014
28