MX29LV004T Datasheet, PDF (23/54 Pages) Macronix International – 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

MX29LV004T/B
AC CHARACTERISTICS TA = -40^oC to 85^oC, VCC = 2.7V~3.6V
(TA = 0^oC to 70^oC, VCC = 3.3V±5% for MX29LV004T/B-55R)
Table 11. Erase/Program Operations
SYMBOL PARAMETER
tWC
Write Cycle Time (Note 1)
tAS
Address Setup Time
tAH
Address Hold Time
tDS
Data Setup Time
tDH
Data Hold Time
tOES Output Enable Setup Time
tGHWL Read Recovery Time Before
Write (OE High to WE Low)
tCS
CE Setup Time
tCH
CE Hold Time
tWP
Write Pulse Width
tWPH Write Pulse Width High
tWHWH1 Programming Operation (Note 2)
(Byte program time)
tWHWH2 Sector Erase Operation (Note 2)
tVCS VCC Setup Time (Note 1)
tRB(Note3)Recovery Time from RY/BY
tBUSY Program/Erase Vaild to RY/BY
(Note 3) Delay
tWPP1 Write pulse width for sector
protect (A9, OE Control)
tWPP2 Write pulse width for sector
protect (A9, OE Control)
29LV004T/B-55R
MIN. MAX.
55
0
45
35
0
0
0
29LV004T/B-70
MIN. MAX.
70
0
45
35
0
0
0
0
0
35
30
9(Typ.)
0
0
35
30
9(Typ.)
0.7(Typ.)
50
0
90
0.7(Typ.)
50
0
90
100ns
100ns
10us
(Typ.)
12ms
(Typ.)
100ns
100ns
10us
(Typ.)
12ms
(Typ.)
29LV004T/B-90
MIN. MAX.
90
0
45
45
0
0
0
UNIT
ns
ns
ns
ns
ns
ns
ns
0
ns
0
ns
35
ns
30
ns
9(Typ.)
us
0.7(Typ.)
sec
50
us
0
ns
90
ns
100ns
100ns
10us
(Typ.)
12ms
(Typ.)
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
3. RY/BY pin is provided for 40-TSOP.
P/N:PM0732
REV. 1.1, SEP. 19, 2001
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