MX29F016 Datasheet, PDF (16/37 Pages) Macronix International – 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY

MX29F016
AC CHARACTERISTICS TA = -40^oC to 85^oC, VCC = 5V ± 10%
Erase/Program Operations
29F016-90
29F016-12
SYMBOL PARAMETER
MIN. MAX. MIN. MAX.
tOES
OE setup time
50
50
tCWC
Command programming cycle
90
120
tCEP
WE programming pulse width
45
50
tCEPH1 WE programming pulse width High
20
20
tCEPH2 WE programming pulse width High
20
20
tAS
Address setup time
0
0
tAH
Address hold time
45
50
tDS
Data setup time
45
50
tDH
Data hold time
0
0
tCESC
CE setup time before command write
0
0
tDF
Output disable time (Note 1)
30
30
tAETC
Total erase time in auto chip erase(Note2,3) 32(TYP.) 256 32(TYP.) 256
tAETB
Total erase time in auto sector erase(Note2,3) 4(TYP.) 30
4(TYP.) 30
tAVT
Byte programming time in auto verify(Note2,3) 7(TYP.) 300 7(TYP.) 300
tBAL
Block address load time
80
80
tCH
CE Hold Time
0
0
tCS
CE setup to WE going low
0
0
tVLHT
Voltge Transition Time
4
4
tOESP
OE Setup Time to WE Active
4
4
tWPP1
Write pulse width for sector protect
10
10
tWPP2
Write pulse width for sector unprotect
12
12
UNIT CONDITIONS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
us
us
ns
ns
us
us
us
ms
NOTES:
1. tDF defined as the time at which the output achieves the open circuit condition and data is no longer driven.
2. Numbers are sampled, not 100% tested.
3. Typical values are measured at 25^oC,VCC=5.0V.
P/N:PM0590
REV. 1.4, NOV. 21, 2002
16