MX25L6475E Datasheet, PDF (16/87 Pages) Macronix International – 64M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY

MX25L6475E
Other Commands
Command
1st byte
2nd byte
3rd byte
4th byte
Action
WREN
(write enable)
WRDI
RDSR (read
(write disable) status register)
RDCR (read
configuration
register)
WRSR
(write status/ 4PP (quad
SE
configuration page program) (sector erase)
register)
06 (hex)
sets the (WEL)
write enable
latch bit
04 (hex)
resets the
(WEL) write
enable latch
bit
05 (hex)
15 (hex)
01 (hex)
38 (hex)
Values
AD1
Values
AD2
AD3
to read out the to read out the to write new quad input to
values of the values of the values of the program the
status register configuration status register selected page
register
20 (hex)
AD1
AD2
AD3
to erase the
selected
sector
Command
1st byte
2nd byte
3rd byte
4th byte
Action
BE 32K (block BE (block
erase 32KB) erase 64KB)
CE (chip
erase)
PP (page
program)
CP (continuous
program)
DP (Deep
power down)
RDP (Release
from deep
power down)
52 (hex)
D8 (hex) 60 or C7 (hex) 02 (hex)
AD (hex)
B9 (hex)
AB (hex)
AD1
AD1
AD1
AD1
AD2
AD2
AD2
AD2
AD3
AD3
AD3
AD3
to erase the to erase the to erase whole to program the continuously enters deep release from
selected 32KB selected 64KB
chip
selected page program power down deep power
block
block
whole chip,
mode
down mode
the address is
automatically
increase
Command
1st byte
2nd byte
3rd byte
4th byte
Action
RDID
(read identific-
ation)
RES (read
electronic ID)
REMS (read
electronic
manufacturer
& device ID)
REMS2 (read REMS4 (read
electronic
electronic ENSO (enter
manufacturer manufacturer secured OTP)
& device ID) & device ID)
9F (hex)
AB (hex)
90 (hex)
EF (hex)
DF (hex)
B1 (hex)
x
x
x
x
x
x
x
x
x
ADD (Note 2)
ADD
ADD
outputs
to read out output the output the output the to enter the
JEDEC 1-byte Device Manufacturer Manufacturer Manufacturer 4K-bit secured
ID: 1-byte
ID
ID & Device ID ID & Device ID ID & device ID OTP mode
Manufacturer
ID & 2-byte
Device ID
P/N: PM1831
REV. 1.1, NOV. 11, 2013
16