MX69F1602 Datasheet, PDF (1/51 Pages) Macronix International – 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY

ADVANCED INFORMATION
MX69F1602/1604C3T/B
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM
MIXED MULTI CHIP PACKAGE MEMORY
FEATURES
• Supply voltage range: 2.7V to 3.6V
• Fast access time: Flash memory:70/90ns
SRAM memory:70/85ns
• Operation temperature range: -40 ~ 85°C
FLASH
• Word mode only
• VCCf=VCCQ=2.7V~3.6V for read, erase and program
operation
• VPP=12V for fast production programming
• Low power consumption
- 9mA typical active read current, f=5MHz
- 18mA typical program current (VPP=1.65~3.6V)
- 21mA typical erase current (VPP=1.65~3.6V)
- 7uA typical standby current under power saving mode
• Sector architecture
- Sector structure : 4Kword x 2 (boot sectors), 4Kword
x 6 (parameter sectors), 32Kword x 31 (main sectors)
- Top/Bottom Boot
• Auto Erase and Auto Program
- Automatically program and verify data at specified
address
- Auto sector erase at specified sector
• Automatic Suspend Enhance
- Word write suspend to read
- Sector erase suspend to word write
- Sector erase suspend to read register report
• Automatic sector erase, word write and sector lock/
unlock configuration
• 100,000 minimum erase/program cycles
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Status Register feature for detection of program or
erase cycle completion
• Data protection performance
- Sectors to be locked/unlocked
• Common Flash Interface (CFI)
• 128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User-Programmable
• Latch-up protected to 100mA from -1V to VCC+1V
SRAM
• MX69F1602C3T/B: 128K wordx16 Bit
• MX69F1604C3T/B: 256K wordx16 Bit
• 70mA maximum active current
• 1uA typical standby current
• Data retention supply voltage: 2.0V~3.6V
• Byte data control : LBs(Q0 to Q7) and UBs(Q8 to Q15)
P/N:PM0954
REV. 0.5, JUL. 09, 2003
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