MX29L3211 Datasheet, PDF (1/38 Pages) Macronix International – 32M-BIT [4M x 8/2M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

ADVANCED INFORMATION
MX29L3211
32M-BIT [4M x 8/2M x 16] CMOS
SINGLE VOLTAGE PAGEMODE FLASH EEPROM
FEATURES
• 3.3V ± 10% write, erase and read
• Endurance: 10,000 cycles
• Fast random access time: 100ns/120ns
• Fast pagemode access time: 50ns
• Page access depth: 16 bytes/8 words
• Sector erase architecture
- 32 equal sectors of 64K word each
- Sector erase time: 200ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip with Erase Suspend capability
- Automatically programs and verifies data at specified
addresses
• Status Register feature for detection of program or
erase cycle completion
• Low VCC write inhibit is equal to or less than 1.8V
• Software data protection
• Page program operation
- Internal address and data latches for 256 bytes/128
words per page
- Page programming time: 5ms typical
• Low power dissipation
- 50mA active current
- 20uA standby current
• Two independently Protected sectors
• Industry standard surface mount packaging
- 44 pin SOP (500mil)
- 48 TSOP(I)
GENERAL DESCRIPTION
The MX29L3211 is a 32-mega bit pagemode Flash
memory organized as either 4M word x 8 or 2M byte x 16.
The MX29L3211 includes 32 sectors of 64K words.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory and fast page mode access. The MX29L3211
is packaged 44-pin SOP and 48-pin TSOP. It is designed
to be reprogrammed and erased in-system or in-standard
EPROM programmers.
The standard MX29L3211 offers access times as fast as
100ns,allowing operation of high-speed microprocessors
without wait. To eliminate bus contention, the MX29L3211
has separate chip enable CE, output enable (OE), and
write enable (WE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29L3211 uses a command register to manage this
functionality.
To allow for simple in-system reprogrammability, the
MX29L3211 does not require high input voltages for
programming. Three-volt-only commands determine
the operation of the device. Reading data out of the
device is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 10,000 cycles. The MXIC's cell is designed
to optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29L3211 uses a 3.3V ± 10% VCC supply to perform
the Auto Erase and Auto Program algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
P/N:PM0641
REV. 0.3, NOV. 06, 2001
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