MX29L1611G Datasheet, PDF (1/34 Pages) Macronix International – 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM

ADVANCED INFORMATION
MX29L1611G / MX29L1611*
FEATURES
• 3.3V ± 10% for write and read operation
• 11V Vpp erase/programming operation
• Endurance: 100 cycles
• Fast random access time: 90ns/100ns/120ns
• Fast page access time: 30ns (Only for 29L1611PC-90/
10/12)
• Sector erase architecture
- 32 equal sectors of 64k bytes each
- Sector erase time: 200ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip
- Automatically programs and verifies data at specified
addresses
16M-BIT [2M x 8/1M x 16] CMOS
SINGLE VOLTAGE FLASH EEPROM
• Status Register feature for detection of program or
erase cycle completion
• Low VCC write inhibit is equal to or less than 1.8V
• Software data protection
• Page program operation
- Internal address and data latches for 64 words per
page
- Page programming time: 5ms typical
• Low power dissipation
- 50mA active current
- 20uA standby current
• Two independently Protected sectors
• Package type
- 42 pin plastic DIP
* For page mode read only
GENERAL DESCRIPTION
The MX29L1611G is a 16-mega bit Flash memory
organized as either 1M wordx16 or 2M bytex8. The
MX29L1611G includes 32 sectors of 64KB(65,536 Bytes
or 32,768 words). MXIC's Flash memories offer the most
cost-effective and reliable read/write non-volatile random
access memory. The MX29L1611G is packaged in 42
pin PDIP.
The standard MX29L1611G offers access times as fast
as 100ns,allowing operation of high-speed
microprocessors without wait. To eliminate bus contention,
the MX29L1611G has separate chip enable CE and,
output enable (OE).
MX29L1611G does require high input voltages for
programming. Commands require 11V input to determine
the operation of the device. Reading data out of the
device is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 100 cycles. The MXIC's cell is designed to
optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29L1611G uses a 11V Vpp supply to perform the
Auto Erase and Auto Program algorithms.
MXIC's Flash memories augment EPROM functionality
with electrical erasure and programming. The
MX29L1611G uses a command register to manage this
functionality.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
P/N:PM0604
REV. 0.8, JAN. 24, 2002
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