MX29L1611 Datasheet, PDF (1/39 Pages) Macronix International – 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM

PRELIMINARY
MX29L1611
16M-BIT [2M x 8/1M x 16] CMOS
SINGLE VOLTAGE PAGEMODE FLASH EEPROM
FEATURES
• Regulated voltage range 3.0 to 3.6V write, erase and
read(MX29L1611-75/10/12)
• Fast random access/page mode access time: 75/
30ns, 100/30ns, 120/30ns.
• Full voltage range 2.7 to 3.6V write, erase and read
(MX29L1611-90)
• Fast random access/page mode access time: 90/
35ns
• Endurance: 10,000 cycles
• Page access depth: 16 bytes/8 words, page address
A0, A1, A2
• Sector erase architecture
- 32 equal sectors of 64k bytes each
- Sector erase time: 200ms typical
• Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the
whole chip with Erase Suspend capability
- Automatically programs and verifies data at specified
addresses
• Status Register feature for detection of program or
erase cycle completion
• Low VCC write inhibit < 1.8V
• Software and hardware data protection
• Page program operation
- Internal address and data latches for 128 bytes/64
words per page
- Page programming time: 5ms typical
• Low power dissipation
- 50mA active current
- 20uA standby current
• Two independently Protected sectors
• Industry standard surface mount packaging
- 44 lead SOP, 48 TSOP(I)
GENERAL DESCRIPTION
The MX29L1611 is a 16-mega bit pagemode Flash
memory organized as either 1M wordx16 or 2M bytex8.
The MX29L1611 includes 32 sectors of 64KB(65,536
Bytes or 32,768 words). MXIC's Flash memories offer
the most cost-effective and reliable read/write non-
volatile random access memory and fast page mode
access. The MX29L1611 is packaged 44-pin SOP and
48-TSOP(I). It is designed to be reprogrammed and
erased in-system or in-standard EPROM programmers.
The standard MX29L1611 offers access times as fast as
100ns,allowing operation of high-speed microprocessors
without wait. To eliminate bus contention, the MX29L1611
has separate chip enable CE, output enable (OE), and
write enable (WE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29L1611 uses a command register to manage this
functionality.
To allow for simple in-system reprogrammability, the
MX29L1611 does not require high input voltages for
programming. Three-volt-only commands determine
the operation of the device. Reading data out of the
device is similar to reading from an EPROM.
MXIC Flash technology reliably stores memory contents
even after 10,000 cycles. The MXIC's cell is designed
to optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide
processing and low internal electric fields for erase and
programming operations produces reliable cycling. The
MX29L1611 uses a 2.7V~3.6V VCC supply to perform
the Auto Erase and Auto Program algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up
protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC +1V.
P/N:PM0511
REV. 2.4, NOV. 06, 2001
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