MX29F040C Datasheet, PDF (1/38 Pages) Macronix International – 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY

MX29F040C
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY
EQUAL SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8 only
• Single power supply operation
- 5.0V only operation for read, erase and program op-
eration
• Fast access time: 55/70/90ns
• Compatible with MX29F040 device
• Low power consumption
- 30mA maximum active current(5MHz)
- 1uA typical standby current
• Command register architecture
- Byte Programming (9us typical)
- Sector Erase
8 equal sectors of 64K-Byte each
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends an erase operation to read data from, or
program data to, another sector that is not being erased,
then resumes the erase
• Status Reply
- Data# Polling & Toggle bit for detection of program
and erase cycle completion
• Sector protect/chip unprotect for 5V only system
• Sector protection
- Hardware method to disable any combination of sec-
tors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors
• 100,000 minimum erase/program cycles
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
- 32-pin PLCC, TSOP or PDIP
- All Pb-free devices are RoHS Compliant
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
GENERAL DESCRIPTION
The MX29F040C is a 4-mega bit Flash memory orga-
nized as 512K bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29F040C is
packaged in 32-pin PLCC, TSOP, PDIP. It is designed
to be reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29F040C offers access time as fast as
55ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29F040C has separate chip enable (CE#) and output
enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F040C uses a command register to manage this
functionality. The command register allows for 100% TTL
level control inputs and fixed power supply levels during
erase and programming, while maintaining maximum
EPROM compatibility.
MXIC Flash technology reliably stores memory con-
tents even after 100,000 erase and program cycles.
The MXIC cell is designed to optimize the erase
and program mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low
internal electric fields for erase and programming
operations produces reliable cycling. The
MX29F040C uses a 5.0V±10% VCC supply to per-
form the High Reliability Erase and auto Program/
Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100
milliamps on address and data pin from -1V to VCC
+ 1V.
P/N:PM1201
REV. 1.0, DEC. 20, 2005
1