MX28F640C3BT Datasheet, PDF (1/41 Pages) Macronix International – 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

ADVANCED INFORMATION
MX28F640C3BT/B
64M-BIT [4M x16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
FEATURES
• Bit Organization: 4,194,304 x 16
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
- VCC=VCCQ=2.7~3.6V
-Operatingtemperature:-40° C~85° C
• Fast access time : 90/120ns
• Low power consumption
- 9mA maximum active read current, f=5MHz (CMOS
input)
- 21mA program erase current maximum
(VPP=1.65~3.6V)
- 7uA typical standby current under power saving
mode
• Sector architecture
- Sector Erase (Sector structure : 4Kword x 2 (boot
sectors), 4Kword x 6 (parameter sectors), 32Kword x
127 (parameter sectors)
- Top/Bottom Boot
• Auto Erase (chip & sector) and Auto Program
- Automatically program and verify data at specified
address
• Automatic Suspend Enhance
- Word write suspend to read
- Sector erase suspend to word write
- Sector erase suspend to read register report
• Automatic sector erase, full chip erase, word write and
sector lock/unlock configuration
• Status Reply
- Detection of program and erase operation comple-
tion.
- Command User Interface (CUI)
- Status Register (SR)
• Data Protection Performance
- Include boot sectors and parameter and main sectors
to be block/unblock
• 100,000 minimum erase/program cycles
• Common Flash Interface (CFI)
• 128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User-Programmable
• Latch-up protected to 100mA from -1V to VCC+1V
• Package type:
- 48-pin TSOP (12mm x 20mm)
GENERAL DESCRIPTION
The MX28F640C3BT/B is a 64-mega bit Flash memory
organized as 4M words of 16 bits. The 1M word of data
is arranged in eight 4Kword boot and parameter sectors,
and 127 32Kword main sector which are individually
erasable. MXIC's Flash memories offer the most cost-
effective and reliable read/write non-volatile random ac-
cess memory. The MX28F640C3BT/B is packaged in
48-pin TSOP. It is designed to be reprogrammed and
erased in system or in standard EPROM programmers.
The standard MX28F640C3BT/B offers access time as
fast as 90ns, allowing operation of high-speed micropro-
cessors without wait states.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX28F640C3BT/B uses a command register to man-
age this functionality. The command register allows for
100% TTL level control inputs and fixed power supply
levels during erase and programming, while maintaining
maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
P/N:PM1084
REV. 0.0, MAR. 17, 2004
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