MX26LV800AT Datasheet, PDF (1/50 Pages) Macronix International – 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY

FEATURES
MX26LV800AT/AB
Macronix NBit^TM Memory Family
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE
3V ONLY HIGH SPEED eLiteFlash^TM MEMORY
• Extended single - supply voltage range 3.0V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55/70ns
• Low power consumption
- 30mA maximum active current
- 30uA typical standby current
• Command register architecture
- Byte/word Programming (55us/70us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase verify capability.
- Automatically program and verify data at specified
address
• Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 2,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- 48-pin TSOP
- 48-ball CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
GENERAL DESCRIPTION
The MX26LV800AT/AB is a 8-mega bit high speed Flash
memory organized as 1M bytes of 8 bits or 512K words
of 16 bits. MXIC's high speed Flash memories offer the
most cost-effective and reliable read/write non-volatile
random access memory. The MX26LV800AT/AB is pack-
aged in 48-pin TSOP, and 48-ball CSP. It is designed to
be reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX26LV800AT/AB offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX26LV800AT/AB has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's high speed Flash memories augment EPROM
functionality with in-circuit electrical erasure and program-
ming. The MX26LV800AT/AB uses a command register
to manage this functionality. The command register al-
lows for 100% TTL level control inputs and fixed power
supply levels during erase and programming, while main-
taining maximum EPROM compatibility.
MXIC high speed Flash technology reliably stores
memory contents even after 2,000 erase and program
cycles. The MXIC cell is designed to optimize the erase
and programming mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low in-
ternal electric fields for erase and program operations
produces reliable cycling. The MX26LV800AT/AB uses
a 3.0V~3.6V VCC supply to perform the High Reliability
Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
P/N:PM1128
REV. 1.1, MAR. 28, 2005
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