MX26LV160AT Datasheet, PDF (1/61 Pages) Macronix International – 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY

MX26LV160AT/AB
FEATURES
Macronix NBit^TM Memory Family
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE
3V ONLY BOOT SECTOR HIGH SPEED eLiteFlash^TM MEMORY
• Extended single - supply voltage range 3.0V to 3.6V
• 2,097,152 x 8 / 1,048,576 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55/70ns
• Low power consumption
- 30mA maximum active current
- 30uA typical standby current
• Command register architecture
- Byte/word Programming (55us/70us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
erase verify capability
- Automatically program and verify data at specified
address
• Status Reply
- Data# polling & Toggle bit for detection of program
and erase operation completion
• Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or
erase operation completion
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors
• CFI (Common Flash Interface) compliant
- Flash device parameters stored on the device and
provide the host system to access
• 2K minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-ball CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
GENERAL DESCRIPTION
The MX26LV160AT/AB is a 16-mega bit high speed Flash
memory organized as 2M bytes of 8 bits or 1M words of
16 bits. MXIC's high speed Flash memories offer the
most cost-effective and reliable read/write non-volatile
random access memory. The MX26LV160AT/AB is pack-
aged in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is
designed to be reprogrammed and erased in system or
in standard EPROM programmers.
The standard MX26LV160AT/AB offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX26LV160AT/AB has separate chip enable
(CE#) and output enable (OE#) controls.
MXIC's high speed Flash memories augment EPROM
functionality with in-circuit electrical erasure and program-
ming. The MX26LV160AT/AB uses a command register
to manage this functionality. The command register al-
lows for 100% TTL level control inputs and fixed power
supply levels during erase and programming, while main-
taining maximum EPROM compatibility.
MXIC high speed Flash technology reliably stores
memory contents even after 2K erase and program
cycles. The MXIC cell is designed to optimize the erase
and programming mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low in-
ternal electric fields for erase and program operations
produces reliable cycling. The MX26LV160AT/AB uses
a 3.0V~3.6V VCC supply to perform the High Reliability
Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamperes on
address and data pin from -1V to VCC + 1V.
P/N:PM1123
REV. 1.1, NOV. 18, 2004
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