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MX25L6402 Datasheet, PDF (1/24 Pages) Macronix International – 64M-BIT [x 1] CMOS SERIAL eLite FlashTM MEMORY
MX25L6402
FEATURES
Macronix NBitTM Memory Family
64M-BIT [x 1] CMOS SERIAL eLite FlashTM MEMORY
GENERAL
• 67,108,864 x 1 bit structure
• 128 Equal Sectors with 64K byte each
- Any sector can be erased
• Single Power Supply Operation
- 3.0 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• Low Vcc write inhibit is equal to or less than 2.2V
PERFORMANCE
• High Performance
- Fast access time: 25MHz serial clock (50pF + 1TTL
Load)
- Fast program time: 4ms/page (typical, 128-byte per
page)
- Fast erase time: 3s/sector (typical, 64K-byte per
sector)
- Acceleration mode:
- Program time: 3.2ms/page (typical)
- Erase time: 2.4s/sector (typical)
• Low Power Consumption
- Low active read current: 24mA (typical) at 25MHz
- Low active programming current: 35mA (typical)
- Low active erase current: 35mA (typical)
- Low standby current: 5uA (typical, CMOS)
• Minimum 100 erase/program cycle
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code, 3-byte address, 1-byte byte
address
• Auto Erase and Auto Program Algorithm
- Automatically erases and verifies data at selected
sector
- Automatically programs and verifies data at selected
page by an internal algroithm that automatically times
the program pulse widths (Any page to be programed
should have page in the erased state first)
• Status Register Feature
- Provides detection of program and erase operation
completion.
- Provides auto erase/ program error report
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI Input
- Serial Data Input
• SO Output
- Serial Data Output
• ACC Pin
- Program/erase acceleration
• PACKAGE
- 32-pin SOP (450mil)
P/N: PM0943
REV. 1.0, SEP. 29, 2004
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