MMDT4413 Datasheet, PDF (2/6 Pages) Transys Electronics – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MCC
TM
Micro Commercial Components
Maximum Ratings @ 25^OC Unless Otherwise Specified
PNP 4403 Section
Symbol
Parameter
Rating
Unit
VCEO
Collector-Emitter Voltage
-40
V
VCBO
Collector-Base Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.6
A
PC
Collector Dissipation
0.2
W
RthJA Thermal Resistance Junction to Ambient Air
625
W
TJ
Operating Junction Temperature
TSTG
Storage Temperature
-55 to +150
к
-55 to +150
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
PNP 4403 Section
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
td
tr
tS
tf
Parameter
Collector-Emitter Breakdown Voltage
(IC=-1mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=-100uAdc, IC=0)
Collector Cutoff Current
(VCB=-50Vdc,IE=0)
Emitter Cutoff Current
(VEB=-5Vdc,IC=0)
DC Current Gain
(IC=-0.1mAdc, VCE=-1Vdc)
(IC=-1mAdc, VCE=-1Vdc)
(IC=-10mAdc, VCE=-1Vdc)
(IC=-150mAdc, VCE=-2Vdc)
(IC=-500mAdc, VCE=-2Vdc)
Collector-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
Base-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
Current Gain-Bandwidth Product
(VCE=-10.0Vdc, IC=-20mAdc, f=100MHz)
Output Capacitance
(VCB=-10Vdc, f=1.0MHz, IE=0)
Delay Time
VCC=-30V,IC=-150mA,
Rise Time
VBE=-2.0V, IB1=-15.0mA
Storage Time V_CC=-30V, I_C=-150mA,
Fall Time
IB1=-IB2=-15mA
Min
-40
-40
-5
---
---
Max
---
---
---
-0.1
-0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
30
60
100
100
20
---
---
-0.75
---
200
---
---
---
---
---
---
---
----
300
---
-0.4
-0.75
-0.95
-1.3
---
8.5
15
20
225
30
---
Vdc
Vdc
MHz
pF
ns
ns
ns
ns
Revision: A
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2 of 6
2011/01/01