MMBT3904 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor

MMBT3904
DC Current Gain vs Collector Current
220
VCE = 5.0V
200
160
hFE
120
80
40
0.1
1
10
100
IC (mA)
Collector Saturation
Volatge vs Collector Current
.150
IC/IB = 10
.125
TA = 25°C
.100
VCE(SAT)
-
(V)
.075
.050
.025
0
0.1
1.0
10
100
IC - (mA)
Collector Cutoff Current vs
Ambient Temperature
1000
VCB = 20V
100
ICBO - (mA)
10
1.0
0
25 50 75 100 125 150
TA - (°C)
MCC
Base-Emitter ON Voltage vs
Collector Current
1.2
VCE = 5.0V
1.0
0.8 _{TA = 25°C}
VBE(ON) - (V)
0.6
0.4 _{TA = 100°C}
0.2
0
0.1
1.0
10
100
IC - (mA)
Base Saturation
Voltage vs Collector Current
1.2
IC/IB = 10
TA = 25°C
1.1
1.0
VBE(SAT) - (V) _.90
.80
.70
.60
0.1
1.0
10
100
IC - (mA)
Capacitance vs
Reverse Bias Voltage
1.0
f = 1 MHz
8
6
pF
4
2
0
0.1
CIB
COB
1.0
10
Volts - (V)
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