MMBT1815-L Datasheet, PDF (2/3 Pages) Micro Commercial Components – NPN EPITAXIAL SILICON TRANSISTOR

MMBT1815
MCC
TM
Micro Commercial Components
ELECTRICAL CHARACTERISTICS Ta= 25°C Unless Otherwise Specified
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain(note)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Current gain bandwidth product
Output capacitance
Noise Figure
Symbol
ICBO
IEBO
hFE1
VCE(sat)
VBE(sat)
fT
Cob
NF
Test conditions
MIN
VCB=60V,IE=0
VEB=5V,Ic=0
VCE=6V,Ic=2mA
130
Ic=100mA,IB=10mA
Ic=100mA,IB=10mA
VCE=10V,Ic=1.0mA,f=30Hz.........80
VCB=10V,IE=0,f=1MHz
Ic=-0.1mA,VCE=6V
RG=10kΩ,f=100Hz
TYP
0.1
2.0
1.0
MAX UNIT
100 nA
100 nA
400
0.25 V
1.0
V
....MHz
3.0 pF
1.0 dB
CLASSIFICATION OF hFE1
RANK
RANGE
L
130-200
H
200-400
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
100
80
IB=300 µA
60
IB=250 µA
40
IB=200 µA
IB=150 µA
20
IB=100 µA
0
0
4
IB=50 µA
8
12
16
20
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
104
Ic=10*IB
103
VBE(sat)
102
VCE(sat)
101
10-1
100
101
102
103
Ic,Collector current (mA)
Fig.2 DC current Gain
103
VCE=6V
2
10
Fig.3 Base-Emitter on Voltage
102
101
VCE=6V
101
100
100
10-1
100
101
102
103
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
product
103
VCE=6V
2
10
10-1
0
0.2
0.4
0.6
0.8
1.0
Base-Emitter voltage (V)
Fig.6 Collector output
Capacitance
2
10
f=1MHz
101
IE=0
101
100
10-1
100
101
102
Ic,Collector current (mA)
100
10-1
100
101
102
103
Collector-Base voltage (V)
Revision: B
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2 of 3
2011/08/09