BAS86 Datasheet, PDF (2/3 Pages) NXP Semiconductors – Schottky barrier diode

BAS86
500
450 VR = 50 V
400
350
300
250
200
150
100 ^{RthJA = 540 K/W}
50
P_R - Limit
at 100 % V_R
P_R - Limit
at 80 % V_R
0
25
50
75 100 125 150
15827
T_j - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
10000
1000
V_R = V _RRM
100
10
1
25
50
75 100 125 150
15828
T_j - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
MCC
TM
Micro Commercial Components
1000
100
10
T_j = 125 °C
T_j = 25 °C
1
0.1
0
0.5
1.0
1.5
15829
V_F - Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
10
9
f = 1 MHz
8
7
6
5
4
3
2
1
0
0.1
1
10
100
15830
V_R - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
Revision: A
www.mccsemi.com
2 of 3
2011/09/16