2SC4097-P Datasheet, PDF (2/3 Pages) Micro Commercial Components – NPN Silicon Epitaxial Transistors

2SC4097-P/Q/R
MCC
TM
Micro Commercial Components
zElectrical characteristic curves
1000
500 ^VCE=6V
200
100
Ta=100°C
50
20
80°C
25°C
10
5
−25°C
−55°C
2
1
0.5
0.2
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100
Ta=25°C
0.50mA
50
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB=0A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
500
Ta=25°C
400
2mA
1.8mA
1.6mA
1.4mA
300
1.2mA
1.0mA
0.8mA
200
0.6mA
0.4mA
100
0.2mA
0
IB=0A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics( ΙΙ )
1
Ta=25°C
lC/lB=10
0.5
0.2
0.1
0.05
0.02
0.5 1 2
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
1000
500
Ta=^100°C
200
75°^C
50^°C
100
25^°C
0°^C
50
−^25°C
−^50°C
20
VCE=3V
10
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current
500
Ta=25°C
VCE=5V
200
100
50
−0.5 −1 −2
−5 −10 −20 −50
EMITTER CURRENT : IE (mA)
Fig. 6 Gain bandwidth product vs.
emitter current
50
Cib
20
Ta=25°C
f=1MHz
IE=0A
IC=0A
10
Cob
5
2
0.5 1 2
5 10 20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Revision: A
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2011/01/01