1EZ110D5 Datasheet, PDF (2/3 Pages) Jinan Gude Electronic Device – 1WATT SILICON ZENER DIODE

1EZ110D5 thru 1EZ200D5
MCC
MCC PART
NUMBER
1EZ110D5
1EZ120D5
1EZ130D5
1EZ140D5
1EZ150D5
1EZ160D5
1EZ170D5
1EZ180D5
1EZ190D5
1EZ200D5
ZENER VOLTAGE
@TEST CURRENT ^(1,2)
VZ
IZT
V
mA
110
2.3
120
2.0
130
1.9
140
1.8
150
1.7
160
1.6
170
1.5
180
1.4
190
1.3
200
1.2
MAXIMUM ZENER IMPEDANCE ⁽³⁾
ZZT
ZZK
IZK
Ohms
Ohms
mA
450
4000
0.25
550
4500
0.25
700
5000
0.25
900
5500
0.25
1000
6000
0.25
1100
6500
0.25
1150
6800
0.25
1200
7000
0.25
1350
7500
0.25
1500
8000
0.25
LEAKAGE CURRENT
IR
VR
ìA
V
5.0
83.6
5.0
91.2
5.0
98.8
5.0
106.4
5.0
114.0
5.0
121.6
5.0
129.2
5.0
136.8
5.0
144.4
5.0
152.0
TYPICAL
TEMP.
COEFFICIENT
%/ ^oC
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.100
Note:
(1) Specials Available Include:
A: Nominal zener voltages between the voltages shown and tighter voltage
Tolerances.
B: Matched sets.
(2) Zener Voltage (V_Z) Measurement. Guarantess the zener voltage when measured at 90 seconds while maintaining the
lead temperature (T_L) at 30 ^oC + or - 1 ^oC, from the diode body.
(3) Zener Impedance (Z_Z) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an ac
current having an rms value equal to 10% of the dc zener current (I_ZT or I_ZK) is superimposed on I_ZT or I_ZK.
1.25
1.0
L = LEAD LENTGH TO
0.75
HEAT SINK
0.50
0.25
0
0 20 40
80 100 120 140 160 180 200
TL, LEAD TEMPERATURE
Fig. 1-POWER TEMPERATURE DERATING CURVE
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