ZTX450 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
ZTX450
Features
• Capable of 0.625Watts of Power Dissipation.
• Collector Current: 1A
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: ZTX450
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Rating
Unit
45
V
60
V
5.0
V
1
A
0.625
W
-55 to +150
к
-55 to +150
к
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
Collector Cutoff Current
(VCB=45Vdc, IE=0)
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
DC Current Gain
(IC=150mAdc, VCE=10Vdc)
DC Current Gain
(IC=1Adc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
Transition Frequency
(VCE=10V, IC=50mA, f=100MHz)
Collector output capacitance
(VCB=10V, f=1MHz)
45
60
5.0
---
---
100
15
---
---
150
---
---
---
0.1
0.1
300
---
0.25
1.1
---
15
Vdc
Vdc
Vdc
uAdc
uAdc
---
---
Vdc
Vdc
MHz
pF

NPN Silicon
Plastic-Encapsulate
Transistor
TO
-92


A
E










B
















C














D


EBC
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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2011/01/01