TPT5609 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TRANSISTOR (NPN)

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
x Excellent linearity of Current Gain
x Low saturation voltage
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
Unit
20
V
25
V
5.0
V
1.0
A
0.75
W
-55 to +150
O_C
-55 to +150
O_C
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
(IC=10Ó´Adc, IE=0)
BVCEO
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
BVEBO
ICBO
Emitter-Base Breakdown Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCB=20Vdc,IE=0)
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
ON CHARACTERISTICS
25 ---
---
Vdc
20 ---
---
Vdc
5.0 ---
---
Vdc
--- --- 1
uAdc
--- --- 1
uAdc
hFE
VBE(on)
VCE(sat)
fT
Cob
DC Current gain
(IC=500mAdc, VCE=2.0Vdc)
Base-Emitter On Voltage
(VCE=2.0Vdc, IC=500mAdc)
Collector-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
Current Gain Bandwidth Product
(VCE=2.0Vdc, IC=500mAdc)
Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
60 --- 240 ---
--- --- 1.0 Vdc
--- --- 0.5 Vdc
--- 190 --- MHz
--- 22 ---
pF
CLASSIFICATION OF hFE
Rank
A
Range
60-120
B
85-170
C
120-240
TPT5609
NPN Epitaxial
Silicon Transistor
TO-92L
BC E
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
3.700
4.100
.146
.161
B
4.000
---
.157
---
C
0.000
0.300
0.000
0.012
D
0.350
0.450
.014
.018
E
1.280
1.580
.050
.062
F
4.700
5.100
.185
.201
G
7.800
8.200
.307
.323
H
13.80
14.20
.543
.559
J
.600
.800
.024
.031
K
0.350
.550
.014
.022
L
1.270
.050
M
2.440
2.640
.096
.104
NOTE
Revision: 1
www.mccsemi.com
1 of 3
2007/12/14