TIP47 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,250-400V,40W)

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TIP47
Features
• Lead Free Finish/RoHS Compliant(Note 1)("P" Suffix designates
RoHS Compliant. See ordering information)
• Silicon Power NPN transistors in TO-220 package.
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
V_CBO
VCEO
VEBO
I_C
I_CM
I_B
P_D
T_J
T_STG
R _thjc
R _thja
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current Peak
Base Current
Collector power dissipation(T_C=25^oC)
Collector power dissipation(T_A=25^oC)
Junction Temperature
Storage Temperature
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rating
350
250
5.0
1.0
2.0
0.6
40
2
-65 to +150
-65 to +150
3.125
62.5
Unit
V
V
V
A
A
A
W
O_C
O_C
o_C/W
o_C/W
NPN Silicon
Power Transistors
TO-220
B
C
F
S
Q
A
12 3
H
T
U
K
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
V_CEO(SUS) Collector-Emitter Sustaining Voltage
250
Ic=30mA;IB=0
---
Vdc
VCE(Sat) Collector-Emitter Saturation Voltage
1.0
---
Vdc
Ic=1A;IB=0.2A
VBE(ON)
ICES
Base-Emitter On Voltage
Ic=1A;VCE=10V
Collector Cutoff Current
1.5
---
Vdc
---
1.0
mAdc
(V_CE=350Vdc,V_BE=0)
I_EBO
Emitter Cutoff Current
(V_EB=5.0Vdc, I_C=0)
---
1.0
mAdc
I_CEO
Collector Cutoff Current
(V_CE=150Vdc;I_B=0)
---
1.0
mAdc
h_FE-1
DC Current Gain
30
150
(I_C=0.3Adc, V_CE=10Vdc)
h_FE-2
DC Current Gain
10
(I_C=1.0Adc, V_CE=10Vdc)
fT
Current Gain-Bandwidth Product
10
MHz
(Ic=0.1Adc;V_CE=10Vdc)
V
L
J
G
N
D
PIN 1.
PIN 2.
R
BASE
COLLECTOR
PIN 3.
EMITTER
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.140
.190
3.56
4.82
D
.020
.045
0.51
1.14
F
.139
.161
3.53
4.09
∅
G
.190
.110
2.29
H
---
.250
---
J
.012
.025
0.30
2.79
6.35
0.64
K
.500
.580
12.70
14.73
L
.045
.060
1.14
1.52
N
.190
.210
4.83
5.33
Q
.100
.135
2.54
3.43
R
.080
.115
2.04
S
.045
.055
1.14
2.92
1.39
T
.230
.270
5.84
6.86
U
-----
.050
-----
1.27
V
.045
-----
1.15
-----
Revision: A
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2011/01/01