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TIP100_11 Datasheet, PDF (1/4 Pages) Micro Commercial Components – NPN Plastic Medium-Power Silicon Transistors
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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$ %    !"#
Features
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
• High DC Current Gain : hFE=2500 (Typ) @ IC=4.0Adc
• Low Collector-Emitter Saturation Voltage
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• TO-220 Compact package
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
Parameter
Rating
Unit
VCEO
Collector-Emitter Voltage
TIP100
TIP101
TIP102
60
80
100
V
VCBO
Collector-Base Voltage
TIP100
60
TIP101
80
V
TIP102
100
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current-continuous
ICP
Collector Current-peak
IB
Base Current
PD
Collector Dissipation @TC=25OC
Derate above 25 OC
TJ,
Junction Temperature
TSTG
Storage Temperature
8.0
15
1.0
80
0.64
-55 to +150
-55 to +150
A
A
A
W
W/ OC
OC
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
VCEO(SUS) Collector-Emitter Sustaining Voltage
(IC=30mAdc, IB=0)
TIP100
60
TIP101
80
TIP101 100
ICEO
Collector Cut-off Current
(VCE=30Vdc, IB=0)
(VCE=40Vdc, IB=0)
(VCE=50Vdc, IB=0)
TIP100
---
TIP101
---
TIP102
---
ICBO
Collector Cut-off Current
(VCB=60Vdc, IE=0)
(VCB=80Vdc, IE=0)
(VCB=100Vdc, IE=0)
TIP100
---
TIP101
---
TIP102
---
IEBO
Emitter Cut-off Current
(VBE=5.0Vdc, IC=0)
---
ON CHARACTERISTICS (1)
---
---
Vdc
---
50
50
uAdc
50
50
50
uAdc
50
8.0
mAdc
hFE(1)
DC Current Gain
(IC=3.0Adc, VCE=4.0Vdc)
(IC=8.0Adc, VCE=4.0Vdc)
VCE(sat) Collector-Emitter Saturation Voltage
(IC=3.0Adc, IB=6.0mAdc)
(IC=8.0Adc, IB=80mAdc)
VBE(ON)
Base-Emitter On Voltage
(IC=8.0Adc,VCE=4.0Adc)
hfe
Small-Signal Current Gain
(IC=3.0Adc,VCE=4.0Vdc,f=1.0MHz)
Cob
Output Capacitance
(VCB=10V, IE=0, f=0.1MHz)
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2%
1000
200
---
---
---
4.0
---
20000
---
2.0
2.5
2.8
---
200
----
Vdc
Vdc
---
pF
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
TIP100
TIP101
TIP102
NPN Plastic
Medium-Power
Silicon Transistors
TO-220
B
F
C
S
Q
A
12 3
H
T
U
K
V
L
D
G
N
J
R
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.140
.190
3.56
4.82
D
.020
.045
0.51
1.14
F
.139
.161
3.53
4.09
∅
G
.190
.110
2.29
2.79
H
---
.250
---
6.35
J
.012
.025
0.30
0.64
K
.500
.580
12.70
14.73
L
.045
.060
1.14
1.52
N
.190
.210
4.83
5.33
Q
.100
.135
2.54
3.43
R
.080
.115
2.04
S
.045
.055
1.14
2.92
1.39
T
.230
.270
5.84
6.86
U
-----
.050
-----
1.27
V
.045
-----
1.15
-----
Revision: A
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2011/01/01