SI2302 Datasheet, PDF (1/5 Pages) Micro Commercial Components – N-Channel Enhancement Mode Field Effect Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
SI2302
Features
• 20V,3.0A, R_DS(ON)=55m¡@V_GS=4.5V
R_DS(ON)=82m¡@V_GS=2.5V
• High dense cell design for extremely low R_DS(ON)
• Rugged and reliable
• Lead free product is acquired
• SOT-23 Package
• Marking Code: S2
• _{Case Material: Molded Plastic. UL Flammability}
Classification Rating 94V-0
Maximum Ratings @ 25^OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
PD
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambient^b
Operating Junction Temperature
Storage Temperature
Rating
20
3
10
f8
1.25
100
-55 to +150
-55 to +150
Internal Block Diagram
D
G
S
Unit
V
A
A
V
W
к/W
к
к
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
2. SOURCE
CB
3. DRAIN
12
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: 1
www.mccsemi.com
1 of 5
2008/01/01