SI2301_11 Datasheet, PDF (1/5 Pages) Micro Commercial Components – P-Channel Enhancement Mode Field Effect Transistor

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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SI2301
Features
• -20V,-2.8A, R_DS(ON)=120mΩ@V_GS=-4.5V
R_DS(ON)=150mΩ@V_GS=-2.5V
• High dense cell design for extremely low R_DS(ON)
• Rugged and reliable
• High Speed Switching
• SOT-23 Package
• Marking Code: S1
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Maximum Ratings @ 25^OC Unless Otherwise Specified
Symbol
VDS
ID
IDM
VGS
PD
RθJA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Drain Current-Pulsed ^a
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambient^b
Operating Junction Temperature
Storage Temperature
Rating
-20
-2.8
-10
±8
1.25
100
-55 to +150
-55 to +150
Internal Block Diagram
D
G
S
Unit
V
A
A
V
W
℃/W
℃
℃
P-Channel
Enhancement Mode
Field Effect Transistor
SOT-23
A
D
3
1.GATE
2. SOURCE
CB
3. DRAIN
12
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
www.mccsemi.com
1 of 5
2011/01/01