English
Language : 

SD103ATW Datasheet, PDF (1/3 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
SD103ATW
Features
· Low Forward Voltage Drop
· Guard Ring Construction for
Transient Protection
· Fast Switching
· Low Leakage Current
· Three Fully Isolated Schottky Diodes
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
x Marking: KLL
200mW
SCHOTTKY BARRIER
DIODE
SOT-363
Maxim um Ratings
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current(note.1)
Average Rectified Output Current(note.1)
Peak Forward Surge Current @t<=10ms
Rating
40
28
350
175
1.0
Unit
V
V
mA
mA
A
R©JA
PD
TJ
TSTG
Thermal Resistance Junction to Ambient
Power dissipation
Junction Temperature
Storage Temperature
500
200
125
-55 to +125
к/W
mW
к
к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Test Conditions
V(BR)
Reverse Breakdown Voltage 40V
---
IR=100­A(note.2)
IR
Reverse Voltage Leakage
Current(note.2)
---
2­A
VR=10V
5­A
VR=30V
VF
Forward Voltage(note.2)
CT
Total Capacitance
trr
Reverse Recovery Time
----
0.27V IF=1.0mA
----
0.32V IF=5.0mA
----
0.37V IF=20mA
----
0.50V IF=100mA
---
50pF VR=0V, f=1MHZ
IF=IR=200mA,
---
10.0ns Irr=0.1*IR,RL=100 W
G
B
C
A
H
K
M
J
D
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.014
0.15
0.35
B
.045
.053
1.15
1.35
C
.085
.096
2.15
2.45
D
.026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.043
0.90
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
Notes: 1. This is the maximum rating of single Diode (D1 or D2 or D3). In the case of using two or three diodes, the maximum ratings per diode are 75% of the
ratings for single diode operation.
2. Short duration test pulse used to minimize self-heating effect.
Revision: A
www.mccsemi.com
1 of 3
2011/01/01