SD103A Datasheet, PDF (1/3 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

MCC

  omponents
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Features
l Low Reverse Recovery Time
l Low Reverse Capacitance
l Low Forward Voltage Drop
l Guard Ring Construction for Transient Protection
Mechanical Data
l Case: DO-35, Glass
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: Indicated by Cathode Band
SD103A
THRU
SD103C
Small Signal
Schottky Diodes
DO-35
Maximum Ratings @ 25^oC Unless Otherwise Specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum sigle cycle surge 60Hz
sine wave
Power Dissipation(Note 1)
Thermal Resistance, Junction to
Ambient
Junction Tmperature
Operation/Storage Temp. Range
Symbol
VR R M
VRWM
VR
VR(RMS)
IFSM
Pd
R
Tj
TSTG
SD103A SD103B SD103C
40V
30V
20V
28V
21V
14V
15A
400mW
300K/W
125^oC
-55 to +150^oC
Electrical Characteristics @ 25^oC Unless Otherwise Specified
D
A
Cathode
Mark
B
D
C
Charateristic
Symbol Type Max Test Condition
SD103A
5.0uA VR =30V
Leakage SD103B IR
----- 5.0uA VR=20V
Current SD103C
5.0uA VR =10V
Maximum Forward
VFM ----- 0.37V IF=20mA
Voltage Drop
0.60V IF=200mA
Junction Capacitance
Reverse Recovery Time
Cj 50pF ----- VR=0V, f=1.0MHz
IF=IR=50mA, recover to
trr
10ns
-----
200mA/0.1IR
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.166
B
---
.079
C
---
.020
D
1.000
---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
Note: 1. Valid provided that electrodes are kept at ambient temperature
NOTE
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