S9013-G Datasheet, PDF (1/2 Pages) Micro Commercial Components – NPN Silicon Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.625Watts(Tamb=25^OC) of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Marking Code: S9013
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
C
Electrical Characteristics @ 25^OC Unless^BEOtherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
ICEO
IEBO
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Collector-Emitter Breakdown Voltage
(I_C=0.1mAdc, I_B=0)
Emitter-Base Breakdown Voltage
(I_E=100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=40Vdc, I_E=0)
Collector Cutoff Current
(V_CE=20Vdc, I_B=0)
Emitter Cutoff Current
(V_EB=5.0Vdc, I_C=0)
40
---
Vdc
25
---
Vdc
5.0
---
Vdc
---
0.1
uAdc
---
0.1
uAdc
---
0.1 uAdc
ON CHARACTERISTICS
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
VEB
DC Current Gain
(IC=50mAdc, VCE=1.0Vdc)
DC Current Gain
(I_C=500mAdc, V_CE=1.0Vdc)
Collector-Emitter Saturation Voltage
(I_C=500mAdc, I_B=50mAdc)
Base-Emitter Saturation Voltage
(I_C=500mAdc, I_B=50mAdc)
Base- Emitter Voltage
(I_E=100mAdc)
SMALL-SIGNAL CHARACTERISTICS
64
400
---
40
---
---
---
0.6
Vdc
---
1.2
Vdc
---
1.4
Vdc
f_T
Transistor Frequency
150
---
MHz
(IC=20mAdc, VCE=6.0Vdc, f=30MHz)
CLASSIFICATION OF HFE (1)
Rank
Range
G
112-166
H
144-202
I
190-300
S9013-G
S9013-H
S9013-I
NPN Silicon
Transistors
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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