S8550-B Datasheet, PDF (1/2 Pages) Micro Commercial Components – PNP Silicon Transistors

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.625Watts(Tamb=25^OC) of Power Dissipation.
• Collector-current 0.5A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Marking: S8550
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
C
BE
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CBO
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
V_(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
V_(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
I_CBO
Collector Cutoff Current
(V_CB=40Vdc, I_E=0)
I_CEO
Collector Cutoff Current
(V_CE=20Vdc, I_B=0)
I_EBO
Emitter Cutoff Current
(V_EB=3.0Vdc, I_C=0)
ON CHARACTERISTICS
40
---
Vdc
25
---
Vdc
5.0
---
Vdc
---
0.1 uAdc
---
0.2 uAdc
---
0.1 uAdc
h_FE(1)
DC Current Gain
(I_C=50mAdc, V_CE=1.0Vdc)
h_FE(2)
DCCurrent Gain
(IC=500mAdc, VCE=1.0Vdc)
V_CE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
V_BE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
V_EB
Base- Emitter Voltage
(I_E=100mAdc)
SMALL-SIGNAL CHARACTERISTICS
85
300
---
40
---
---
---
0.6
Vdc
---
1.2
Vdc
---
1.4
Vdc
fT
Transistor Frequency
150
---
MHz
(I_C=20mAdc, V_CE=6.0Vdc, f=30MHz)
CLASSIFICATION OF HFE (1)
Rank
Range
B
85-150
C
120-200
D
160-300
S8550-B
S8550-C
S8550-D
PNP Silicon
Transistors
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.170
.190
B
.170
.190
C
.550
.590
D
.010
.020
E
.130
.160
G
.096
.104
MM
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
Revision: A
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2011/01/01