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PXT3904 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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PXT3904
Features
• Capable of 500mWatts of Power Dissipation and 200mA Ic.
x Operating and Storage Junction Temperatures: -55ć to 150ć
x Compliment to PXT3906
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: 1A
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
40
Vdc
(IC=1.0mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
60
Vdc
(IC=10µAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
6.0
Vdc
(IE=10µAdc, IC=0)
ICBO
Collector Cutoff Current
50
nAdc
(VCB=30Vdc, IE=0)
IEBO
Cutoff Current
50
nAdc
(VEB=6Vdc, IC=0)
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
(IC=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
SMALL-SIGNAL CHARACTERISTICS
60
80
100
300
60
30
0.2
Vdc
0.3
0.65
0.85
Vdc
0.95
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
300
MHz
Cobo
Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz)
4.0
pF
Cibo
Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz)
8.0
pF
NF
Noise Figure
(IC=100µAdc, VCE=5.0Vdc, RS=1.0kΩ
5.0
dB
f=10Hz to 15.7kHz)
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=3.0Vdc, VBE=0.5Vdc
tr
Rise Time
IC=10mAdc, IB1=1.0mAdc)
ts
Storage Time (VCC=3.0Vdc, IC=10mAdc
tf
Fall Time
IB1=IB2=1.0mAdc)
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
35
ns
35
ns
200
ns
50
ns
NPN General
Purpose Amplifier









C


D

G






1

SOT-89
A
B
K
E
H
J
F
2
3
1. Base
2. Collector
3. Emitter












 


 

 








































 










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