PXT2907A Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistor

MCC
TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• ICM: 0.6A
x Operating and Storage Junction Temperatures: -55ć to 150ć
• Marking:p2F
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown Voltage*
(IC=-10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-1mAdc, IE=0)
V(BR)EBO
IEBO
ICBO
Emitter-Base Breakdown Voltage
(IE=-1mAdc, IC=0)
Emitter Cut-off Current
(IC=0, VEB=-5Vdc)
Collector Cutoff Current
(VCB=-50Vdc,IE=0)
ON CHARACTERISTICS
-60
-60
-5.0
-0.01
-0.01
Vdc
Vdc
Vdc
uAdc
uAdc
hFE
DC Current Gain
(IC=-0.1mAdc, VCE=-10Vdc)
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-150mAdc, VCE=-10Vdc)
(IC=-500mAdc, VCE=-10Vdc)
75
100
100
100
300
50
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
Base-Emitter Saturation Voltage
(IC=-150mAdc, IB=-15mAdc)
(IC=-500mAdc, IB=-50mAdc)
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=-20mAdc, VCE=-10Vdc, f=100MHz)
200
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=-30Vdc, IC=-150mAdc
tr
Rise Time
IB1=IB2=-15mAdc)
ts
Storage Time (VCC=-30Vdc, IC=-150mAdc
tf
Fall Time
IB1=IB2=-15mAdc)
-0.4
Vdc
-1.6
-1.3
Vdc
-2.6
MHz
12
ns
30
ns
300
ns
65
ns
PXT2907A
0.5W
PNP General
Purpose Amplifier




























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Revision: A
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2011/05/05