PXT2222A Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

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TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• ICM: 0.6A
x Operating and Storage Junction Temperatures: -55ć to 150ć
• Marking:1P
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=10µAdc, IE=0)
V(BR)EBO
IBL
ICEX
Emitter-Base Breakdown Voltage
(IE=10µAdc, IC=0)
Base Cutoff Current
(VCE=60Vdc, VBE=3.0Vdc)
Collector Cutoff Current
(VCE=60Vdc, VBE=3.0Vdc)
ON CHARACTERISTICS
40
Vdc
75
Vdc
6.0
Vdc
20
nAdc
10
nAdc
hFE
VCE(sat)
VBE(sat)
DC Current Gain
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
SMALL-SIGNAL CHARACTERISTICS
35
50
75
100
300
50
40
0.3
Vdc
1.0
0.6
1.2
Vdc
2.0
fT
Current Gain-Bandwidth Product
(IC=20mAdc, VCE=20Vdc, f=100MHz)
300
MHz
Cobo
Output Capacitance
(VCB=10Vdec, IE=0, f=1 .0MHz)
8.0
pF
Cibo
Input Capacitance
(VBE=0.5Vdc, IC=0, f=1 .0MHz)
25
pF
NF
Noise Figure
(IC=100µAdc, VCE=10Vdc, RS=1.0kΩ
4.0
dB
f=1.0kHz)
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=30Vdc, VBE=0.5Vdc
tr
Rise Time
IC=150mAdc, IB1=15mAdc)
ts
Storage Time (VCC=30Vdc, IC=150mAdc
tf
Fall Time
IB1=IB2=15mAdc)
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
10
ns
25
ns
225
ns
60
ns
PXT2222A
0.5W
NPN General
Purpose Amplifier




























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