PN2907A Datasheet, PDF (1/3 Pages) NXP Semiconductors – PNP switching transistor

MCC

  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
PN2907A
Features
• Through Hole Package
• Capable of 600mWatts of Power Dissipation
Pin Configuration
Bottom View
CB E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
ICBO
Collector-Emitter Breakdown Voltage*
(IC=10mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=10µAdc, IE=0)
Emitter-Base Breakdown Voltage
(IE=10µAdc, IC=0)
Base Cutoff Current
(VCE=30Vdc, VBE=0.5Vdc)
Collector Cutoff Current
(VCE=30Vdc, VBE=0.5Vdc)
Collector Cutoff Current
(VCB=50Vdc, IE=0)
(VCB=50Vdc, IE=0, TA=150°C)
60
Vdc
60
Vdc
5.0
Vdc
50
nAdc
50
nAdc
0.1
µAdc
10.0
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)
(IC=500mAdc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
75
100
100
300
100
50
0.4
Vdc
1.6
1.3
Vdc
2.6
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=50mAdc, VCE=20Vdc, f=100MHz)
200
MHz
Ccbo
Output Capacitance
(VCB=10Vdc, IE=0, f=100kHz)
8.0
pF
Cibo
Input Capacitance
(VEB=2.0Vdc, IC=0, f=100kHz)
30.0
pF
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=3.0Vdc, IC=150mAdc,
tr
Rise Time
IB1=15mAdc)
ts
Storage Time (VCC=3.0Vdc, IC=150mAdc
tf
Fall Time
IB1=IB2=15mAdc)
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
10
ns
40
ns
80
ns
30
ns
PNP General
Purpose Amplifier
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.45
12.70
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
www.mccsemi.com