PN2222A Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN switching transistor

MCC

  omponents
21201 Itasca Street Chatsworth

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Features
• Through Hole Package
• Capable of 600mWatts of Power Dissipation
Pin Configuration
Bottom View
CB E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
40
Vdc
(IC=10mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
75
Vdc
(IC=10µAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
6.0
Vdc
(IE=10µAdc, IC=0)
IBL
Base Cutoff Current
20
nAdc
(VCE=60Vdc, VBE=3.0Vdc)
ICEX
Collector Cutoff Current
10
nAdc
(VCE=60Vdc, VBE=3.0Vdc)
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=0.1mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
(IC=10mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=10Vdc)
(IC=150mAdc, VCE=1.0Vdc)
(IC=500mAdc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=150mAdc, IB=15mAdc)
(IC=500mAdc, IB=50mAdc)
35
50
75
100
300
50
40
0.3
Vdc
1.0
0.6
1.2
Vdc
2.0
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=20mAdc, VCE=20Vdc, f=100MHz)
300
MHz
Cobo
Output Capacitance
(VCB=10Vdec, IE=0, f=100kHz)
8.0
pF
Cibo
Input Capacitance
(VBE=0.5Vdc, IC=0, f=100kHz)
25
pF
NF
Noise Figure
(IC=100µAdc, VCE=10Vdc, RS=1.0kΩ
4.0
dB
f=1.0kHz)
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=30Vdc, VBE=0.5Vdc
tr
Rise Time
IC=150mAdc, IB1=15mAdc)
ts
Storage Time (VCC=30Vdc, IC=150mAdc
tf
Fall Time
IB1=IB2=15mAdc)
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
10
ns
25
ns
225
ns
60
ns
PN2222A
NPN General
Purpose Amplifier
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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