MS8050-L Datasheet, PDF (1/3 Pages) Micro Commercial Components – NPN Silicon Plastic-Encapsulate Transistor

MCC
TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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MS8050-L
MS8050-H
Features
• SOT-23 Plastic-Encapsulate Transistors
• Capable of 0.2Watts(Tamb=25^OC) of Power Dissipation.
• Collector-current 0.8A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55^OC to +150^OC
• Marking Code: Y11
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
Emitter-Base Breakdown Voltage
(I_E=100uAdc, I_C=0)
Collector Cutoff Current
(V_CB=35Vdc, I_E=0)
Collector Cutoff Current
(V_CE=20Vdc, I_B=0)
40
---
Vdc
25
---
Vdc
6.0
---
Vdc
---
0.1
uAdc
---
0.1
uAdc
ON CHARACTERISTICS
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
DC Current Gain
(IC=5mAdc, VCE=1.0Vdc)
DCCurrent Gain
(IC=100mAdc, VCE=1.0Vdc)
DCCurrent Gain
(IC=800mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=800mAdc, IB=80mAdc)
Base-Emitter Saturation Voltage
(I_C=800mAdc, I_B=80mAdc)
45
80
300
40
---
0.5
Vdc
---
1.2
Vdc
SMALL-SIGNAL CHARACTERISTICS
f_T
Transistor Frequency
(I_C=20mAdc, V_CE=6.0Vdc, f=30MHz)
CLASSIFICATION OF HFE (2)
Rank
Range
L
80-200
150
---
MHz
H
200-300
NPN Silicon
Plastic-Encapsulate
Transistor
SOT-23
A
D
C
F
E
CB
B
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01