MPSA92 Datasheet, PDF (1/2 Pages) Motorola, Inc – High Voltage Transistors

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MPSA92
Features
• Through Hole Package
• Operating & Storage Temperature: -55°C to +150°C
• Marking Code: A92
Pin Configuration
Bottom View
CB E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
ICBO
Collector-Emitter Breakdown Voltage*
(IC=-1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100µAdc, IE=0)
Emitter -Base Breakdown Voltage
(IE=-10µAdc, IC=0)
Emitt er Cutoff Current
(VEB=-3.0Vdc, IC=0)
Collector Cutoff Current
(VCB=-200Vdc, IE=0)
-300
-300
-5.0
-0.25
-0.25
Vdc
Vdc
Vd c
uA dc
u A dc
ON CHARACTERISTICS
hFE
VCE(sat)
DC Current Gain*
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-50mAdc, VCE=-10Vdc)
Collector-Emitter Saturation Voltage
(IC=-20mAdc, IB=-2.0mAdc)
25
80
250
25
-0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=-20mAdc, IB=-2.0mAdc)
-0.9
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=-10mAdc, VCE=-5Vdc, f=30MHz)
Ccb
Coll ector -Base Capacitance
(VCB=-20Vdc, IE=0, f=1 .0MHz)
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
MAXIMUM RATINGS
50
MHz
6.0
pF
Symbol
VCEO
VCBO
VEBO
IC
R_qJA
R_qJC
PD
PD
Characteristic
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MPSA92
–300
–300
–5.0
–300
200
83.3
625
5.0
1.5
12
Unit
Vdc
Vdc
Vdc
mAdc
°C/W
°C/W
mW
mW/°C
Watts
mW/°C
PNP Silicon High
Voltage Transistor
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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