MPSA06 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistor

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Features
l NPN Silicon Epitaxial planar Transistor for switching and
amplifier applications
l As complementary type, the PNP transistor is MPSA56
l On special request, this transistor is also manufactured
in the pin configuration TO-18
Mechanical Data
l Case: TO-92, Molded Plastic
l Weight: 0.18 grams (Approx.)
Maximum Ratings @ 25^oC Unless Otherwise Specified
Characteristic
Collect to Base Voltage
Collect to Emitter Voltage
Emitter to Base Voltage
Collect Current
Total Power Dissipation @ TA=25^oC
Total Power Dissipation @ TC=25^oC
Symbol
VCBO
VCEO
VEBO
IC
P tot
P tot
Value
80
80
4.0
500
625
1.5
Unit
V
V
V
mA
mW
W
Thermal Resistance Junction to
Ambient
Junction Temperature
Storage Temperature
R_qJA
Tj
TSTG
200
150
-55 to 150
o_C/W
o_C
o_C
Electrical Characteristics @ 25^oC Unless Otherwise Specified
Charateristic
Symbol Min Max Unit
Test Cond.
Collector Cut-off Current ICBO
Collector to Emitter
Saturatuion Voltage
V CE(sat)
1 0 0 nA VCB =80V, IE = 0
0.25 V IC=100mA, I B= 1 0 m A
DC Current Gain
hFE
100
100
VCE =1V, IC=10mA
V_CE =1V, I_C=100mA
Gain Bandwidth Product fT
100
M H z ^{VCE =2V, IC=20mA,}
f=100MHz
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
V (BR)CEO 80
V (BR)EBO 4
V IC=1mA, I B= 0
V IE=100 uA, I C= 0
Base-Emitter ON
Voltage
VBE(ON)
1 . 2 V IC=10mA, IB = 1 m A
Note: Valid provided that leads are kept at ambient temperature.
MPSA06
NPN Small
Signal Transistor
625 mW
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.175
.185
B
.175
.185
C
.500
---
D
.016
.020
E
.135
.145
G
.095
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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