MPS651 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE)

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
• Switching and Amplifier Applications
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Marking Code:MPS651
051
Maximum Ratings
Symbol
Rating
V_CEO
V_CBO
V_EBO
I_C
T_J
T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Thermal Characteristics
Rating
Unit
60
V
80
V
5.0
V
2
A
-55 to +150
O_C
-55 to +150
O_C
Symbol
Rating
P_D
Total Device Dissipation
Max
Unit
625
mW
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
Collector-Emitter Breakdown Voltage*
(I_C=10mAdc, I_B=0)
Collector-Base Breakdown Voltage
(I_C=100uAdc, I_E=0)
Emitter-Base Breakdown Voltage
(I_E=10uAdc, I_C=0)
Collector Cutoff Current
(V_CB=80Vdc, I_E=0)
Base Cutoff Current
(V_EB=4Vdc, I_C=0)
DC Current Gain
(V_CE=2.0Vdc, I_C=50mAdc)
(V_CE=2.0Vdc, I_C=100mAdc)
(V_CE=2.0Vdc, I_C=1Adc)
(V_CE=2.0Vdc, I_C=2Adc)
Collector-Emitter Saturation Voltage
(I _C=2Adc, I_B=200mAdc)
(I _C=1Adc, I_B=100mAdc)
60
---
Vdc
80
---
Vdc
5.0
---
Vdc
---
100 nAdc
---
100 nAdc
75
75
75
40
0.5 Vdc
0.3 Vdc
V_BE(sat)
V_BE(on)
f_T
Base-Emitter saturation Voltage
(I_C=1Adc, I_B=100mA)
Base-Emitter On Voltage
(I_C=1Adc, V_CE=2.0Vdc)
Transition frequency
(I_C=50mAdc, V_CE=5Vdc,f=100MHz)
1.2 Vdc
1.0
Vdc
75
MHz
MPS651
NPN Encapsulate
Transistors
TO-92
A
E
B
C
D
E
G
BC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
www.mccsemi.com
1 of 3
2011/01/01