MPS3702 Datasheet, PDF (1/3 Pages) Samsung semiconductor – PNP (AMPLIFIER TRANSISTOR)

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Features
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 500mA
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings*
Symbol
Rating
V_CEO
V_CBO
V_EBO
I_C
T_J
T_STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Operating Junction Temperature
Storage Temperature
Thermal Characteristics
Symbol
Rating
P_D
Total Device Dissipation
Derate above 25^OC
R_{J C}
Thermal Resistance, Junction to Case
R_JA
Thermal Resistance, Junction to Ambient
Rating
25
40
5.0
800
-55 to +150
-55 to +150
Max
625
5.0
83.3
200
Unit
V
V
V
mA
O_C
O_C
Unit
mW
mW/ ^OC
O_C/W
O_C/W
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(I_C=10mAdc, I_B=0)
25
---
V(BR)CBO
Collector-Base Breakdown Voltage
(I_C=100ì Adc, I_E=0)
40
---
V(BR)EBO
Emitter-Base Breakdown Voltage
(I_E=100ì Adc, I_C=0)
5.0
---
I_CBO
Collector Cutoff Current
(V_CB=20Vdc, I_E=0)
---
100
I_EBO
Base Cutoff Current
(V_EB=3.0Vdc, I_C=0)
---
100
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
Notes: 1. These ratings are based on a maximum junction temperature of 150
degrees C.
2. These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
Vdc
Vdc
Vdc
nAdc
nAdc
MPS3702
PNP General
Purpose Amplifier
TO-92
A
E
B
C
D
G
EB
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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2011/01/01