MMST5551 Datasheet, PDF (1/2 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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MMST5551
Features
• Power dissipation: 200mW (T_amb=25ć)
• Collector current: 0.2A
• Marking : K4N
• Operating and Storage junction temperature range
-55ć to + 150ć
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS ⁽²⁾
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
NF
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
Collector Cutoff Current
(VCB=35Vdc, IE=0Vdc)
Emitter Cutoff Current
(VEB=5Vdc, IC=0Vdc)
DC Current Gain
(IC=1mAdc, VCE=5Vdc)
(IC=10mAdc, VCE=5Vdc)
(IC=50mAdc, VCE=5Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
Current Gain-Bandwidth Product
(VCE=10Vdc, IC=20mAdc, f=100MHz)
Output Capacitance
(VCB=10Vdc, f=1.0MHz, IE=0)
Noise Figure
(VCE=5V, IC=0.2mA, f=1KHz, Rg=10¡)
160
---
Vdc
180
---
Vdc
5.0
---
Vdc
---
50
nAdc
---
50
nAdc
80
---
---
80
250
---
30
---
---
---
---
0.15
0.2
Vdc
---
---
1
1
Vdc
100
300 MHz
---
6
pF
---
8
dB
NPN Small Signal
Transistors
SOT-323
A
D
C
BC
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
Suggested Solder
Pad Layout
0.70
NOTE
0.90
1.90
0.65
0.65
Revision: 3
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2008/01/01