MMST5401 Datasheet, PDF (1/2 Pages) Diodes Incorporated – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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MMST5401
Features
• Power dissipation: 200mW (T_amb=25ć)
• Collector current: -0.2A
• Marking : K4M
• Operating and Storage junction temperature range
-55ć to + 150ć
• Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS ⁽²⁾
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
NF
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=-10uAdc, IC=0)
Collector Cutoff Current
(VCB=-120Vdc, IE=0Vdc)
Emitter Cutoff Current
(VEB=-3Vdc, IC=0Vdc)
DC Current Gain
(IC=-1mAdc, VCE=-5Vdc)
(IC=-10mAdc, VCE=-5Vdc)
(IC=-50mAdc, VCE=-5Vdc)
Collector-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
Base-Emitter Saturation Voltage
(IC=-10mAdc, IB=-1mAdc)
(IC=-50mAdc, IB=-5mAdc)
Current Gain-Bandwidth Product
(VCE=-10Vdc, IC=-10mAdc, f=100MHz)
Output Capacitance
(VCB=-10Vdc, f=1.0MHz, IE=0)
Noise Figure
(VCE=-5V, IC=-0.2mA, f=-1KHz, Rg=10¡)
-150
-160
-5.0
---
---
50
60
50
---
---
---
---
100
---
---
---
Vdc
---
Vdc
---
Vdc
-50
nAdc
-50
nAdc
---
---
240
---
---
---
-0.2
-0.5
Vdc
-1
-1
Vdc
300 MHz
6
pF
8
dB
PNP Small Signal
Transistors
SOT-323
A
D
C
BC
F
E
B
E
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
K
.012
.016
.30
.40
Suggested Solder
Pad Layout
0.70
0.90
1.90
NOTE
0.65
0.65
Revision: 3
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2008/01/01